The increased deployment of photovoltaic (PV) technologies is one of the most effective strategies for generating clean energy with minimal environmental impact. Among the various PV technologies, Tunnel Oxide Passivated Contact (TOPCon) solar cells have gained the largest market share in the last 2 years. They are now a leading global technology due to their high efficiency. A distinguishing feature of TOPCon cells is the integration of an ultrathin interfacial oxide (iOx) layer with a heavily doped polycrystalline silicon (poly-Si) layer. As these devices approach their theoretical efficiency limits, understanding the role of metallization, particularly finger morphology and silver consumption per cell, as presented by the ITRPV 2024 roadmap, becomes increasingly important. Simulations serve as a powerful tool to study these complex structures. Dr. Savita Kashyap, an institute Postdoctoral Researcher working under the supervision of NPRE’s Prof. Anil Kottantharayil, presented an optimization of various TOPCon device designs to explore the commercial viability of these designs. These designs include monofacial and bifacial architectures with single-side (SS) and double-side (DS) TOPCon structures, and were analyzed using Sentaurus TCAD software. The study first examines the influence of metallization parameters on monofacial SS-TOPCon cells, followed by an in-depth investigation of bifacial DS-TOPCon cells. Simulation results indicate that suppressing recombination at the contact regions is a critical strategy for improving device performance, enabling an optimized efficiency of up to 26.45%. These insights will help PV industry (in India and globally) address key challenges and enable TOPCon solar cells achieve efficiencies closer to their theoretical limits. The work titled “Numerical analysis of metal poly-Si contact in TOPCon solar cells through device simulations using Sentaurus TCAD” was presented at the 15th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2025), held in Oxford, UK, from April 8–11, 2025.