Perovskite based devices are being explored not only for Photovoltaics but also for various opto- electronic applications like light emitting diode (LED) and solid-state memories. In all these applications, device electrostatics is influenced by ion migration, which have long term implications regarding stability and performance degradation.
The behaviour of mobile ions in perovskite devices is often complex and surprising. In this article, we show
that for small signal switching, the time delay in current response scales inversely with the ion mobility
whereas for large signal switching the time delay is independent of ion mobility and entirely dependent
on electronic dipoles. These results and the corresponding theory are backed by numerical simulations
(in-house developed code) and experimental observations from Prof. Dinesh Kabra’s group and data from
various labs. If you are curious to know more, please refer to the paper
Saketh Chandra, T.; Singareddy, A.; Hossain, K.; Sivadas, D.; Bhatia, S.; Singh, S.; Kabra, D.; Nair, P. R. Ion Mobility Independent Large Signal Switching of Perovskite Devices. Appl. Phys. Lett. 2021, 119 (2).
Corresponding author: Prof. Pradeep R. Nair, EE, IIT Bombay; Email: firstname.lastname@example.org
Figure: (Left) Large signal switching of perovskite PIN device. (Top right figure) Schematic of the device with ion migration at V=0 and V > VBI (built-in voltage). (Bottom right figure) Schematic of the applied bias and resultant current through the device depicting the time delay (TD).
People Involved –
Prof. Dinesh Kabra
Prof. Pradeep R Nair